Molecular beam epitaxy of Zn-polar ZnO/BeMgZnO heterostructure field effect transistors on GaN and c-sapphire: a comparative study

Kai Ding; Vitaliy Avrutin; Natalia Izyumskaya; Ümit Özgür; Hadis Morkoç

doi:10.1117/12.2550534

5 March 2020 Molecular beam epitaxy of Zn-polar ZnO/BeMgZnO heterostructure field effect transistors on GaN and c-sapphire: a comparative study

Kai Ding, Vitaliy Avrutin, Natalia Izyumskaya, Ümit Özgür, Hadis Morkoç

Author Affiliations +

Proceedings Volume 11281, Oxide-based Materials and Devices XI; 112811Q (2020) https://doi.org/10.1117/12.2550534
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Previously we have conducted researches on the molecular beam epitaxy (MBE) of Zn-polar BeMgZnO/ZnO heterostructure field effect transistor (HFET) structures on GaN templates, which exhibit both high two-dimensional gas (2DEG) density and high electron mobility with relatively low Mg contents via the strain modulation of Be and Mg co-incorporation. In this contribution, we report on the growth of the HFET structures directly on sapphire substrate by employing a buffer consisting of a rock-salt structure MgO layer, a low-temperature (LT) ZnO layer and a high-temperature (HT) ZnO layer. Compared with growth of O-polar on sapphire, in which a thin and wurtzite MgO buffer is deposited at high temperatures above 700 °C, the MgO buffer for Zn-polar growth has to be reduced to 450 °C, in order to obtain smooth interface and surface for the BeMgZnO/ZnO HFETs. The residual electron sheet concentration in Zn-polar ZnO layers is ~2×10¹² cm^-2 on GaN while semi-insulating Zn-polar ZnO layers on sapphire have been obtained via controlling the buffer growth conditions, which is vital to the realization of HFET device structures.

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Kai Ding, Vitaliy Avrutin, Natalia Izyumskaya, Ümit Özgür, and Hadis Morkoç "Molecular beam epitaxy of Zn-polar ZnO/BeMgZnO heterostructure field effect transistors on GaN and c-sapphire: a comparative study", Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112811Q (5 March 2020); https://doi.org/10.1117/12.2550534

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