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Advanced characterization techniques for nanoscale photoresist structure
Miquel Salmeron, Slavomir Nemsak, and Patrick Naulleau
Lawrence Berkeley National Laboratory, University of California Berkeley
The spatial chemical structure of photoresists before and after processing is currently limited to a resolution of 10’s of nanometers, far above the desirable level of mono and sub-nm resolution that can enable the next generation of microelectronic circuits and devices. We will discuss in this presentation novel characterization techniques that will open the door for advanced spectroscopic characterization of polymer interfaces both in the latent image and the developed image. Among the new techniques being currently developed we will describe plasmonically enhanced infrared spectroscopy that provides FTIR spectra with nm x-y resolution along the interface between the photoresist and the substrate/underlayer. Additionally, we will present Standing Wave X-ray Photoelectron Spectroscopy in soft and tender X-ray regime, which provides elemental and chemical state composition in the z-direction across surfaces and buried interfaces. Currently these techniques have provided the first nanoscale characterization of the molecular structure of solid-liquid interfaces, revealing the chemical structure of the electrical double layer, of crucial importance in batteries, corrosion phenomena, and electrocatalysis. Applications to the polymer-substrate interface is currently underway.
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