Three dimensional Dirac semimetal thin film heterojunction photodetector: organics on Cd3As2

Ming Yang; Jun Wang; Weizhi Li; Yadong Jiang

doi:10.1117/12.2542104

18 December 2019 Three dimensional Dirac semimetal thin film heterojunction photodetector: organics on Cd₃As₂

Ming Yang, Jun Wang, Weizhi Li, Yadong Jiang

Proceedings Volume 11334, AOPC 2019: Optoelectronic Devices and Integration; and Terahertz Technology and Applications; 113340C (2019) https://doi.org/10.1117/12.2542104
Event: Applied Optics and Photonics China (AOPC2019), 2019, Beijing, China

Abstract

Photodetector that use three dimensional (3D) Dirac Semimetal have received considerable attention because Dirac Semimetal is regarded as an ideal candidate electrode material. In this work, organics is steamed by heat on Cd₃As₂ thin film is used in the field of photoelectric detection. Surprisingly, the photodetector shows excellent photo response properties from 405 nm to 1550 nm. The device exhibiting high photocurrent responsivity (407 mA/W) and external quantum efficiency (58.7 %) at the wavelength of 808 nm, which Ri is more than six times than pure Cd₃As₂ thin film devices. Most interestingly, the NIR photocurrent responsivity of this device can reach 53.1 mA/W. Overall, the broadband photodetector based on using organics and 3D Cd₃As₂ Dirac semimetal thin film heterojunction is proved to better performance for photoelectric application. Moreover, organics/Cd₃As₂ thin film heterojunction also has advantage in low cost array devices. The use of Cd₃As₂ thin film and organics opens up a new path for the practical application of Dirac Semimetal materials.

Citation Download Citation

Ming Yang, Jun Wang, Weizhi Li, and Yadong Jiang "Three dimensional Dirac semimetal thin film heterojunction photodetector: organics on Cd₃As₂", Proc. SPIE 11334, AOPC 2019: Optoelectronic Devices and Integration; and Terahertz Technology and Applications, 113340C (18 December 2019); https://doi.org/10.1117/12.2542104

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