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A new method for minimizing image lag due to charge spill-back has been developed for pinned photodiode CMOS image sensors. The proposed method involves the use of multi-level transfer gate voltage during a single charge transfer period. Measurement results show that the new transfer process maintains the lower values for image lag at low signal levels that a high transfer gate voltage grants, whilst simultaneously preserving the later onset of spill-back dominated lag that a lower transfer gate voltage allows.
J. Ivory,K. D. Stefanov, andA. D. Holland
"Mitigating charge spill-back induced image lag with a multi-level transfer gate pulse in PPD image sensors", Proc. SPIE 11454, X-Ray, Optical, and Infrared Detectors for Astronomy IX, 114540F (13 December 2020); https://doi.org/10.1117/12.2562529
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J. Ivory, K. D. Stefanov, A. D. Holland, "Mitigating charge spill-back induced image lag with a multi-level transfer gate pulse in PPD image sensors," Proc. SPIE 11454, X-Ray, Optical, and Infrared Detectors for Astronomy IX, 114540F (13 December 2020); https://doi.org/10.1117/12.2562529