Plasmonic computational lithography for below 10-nm patterning

Sang-Kon Kim

doi:10.1117/12.2570752

20 August 2020 Plasmonic computational lithography for below 10-nm patterning

Sang-Kon Kim

Proceedings Volume 11462, Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XVIII; 114622Y (2020) https://doi.org/10.1117/12.2570752
Event: SPIE Nanoscience + Engineering, 2020, Online Only

Abstract

The surface plasmonic lithography (SPL) is low cost and simpler system configuration. Thus, for the nano-scale features, there have been many developments of the maskless SPL technologies. In this study, for below 10-nm patterning, SPL process based on the SP interference and metamaterial in bowtie and hexahedron structures is modeled and simulated by using the rigorous coupled-wave analysis (RCWA) method and the finite difference time domain (FDTD) method. SPL is not only capable to high resolution beyond the restriction of diffraction limit but also applicable to conventional light source. For 193-nm wavelength, the minimum FWHMs (the full width at half maximum) of the transverse magnetic (TM) intensity in xz plane and yz plane are 10-nm and 7-nm in a bowtie plasmonic structure, respectively. For hexahedron structures, the minimum 30-nm FWHM of TM intensity with 193-nm wavelength is improved to the minimum 16-nm FWHM by using metamaterial and SP interference.

Conference Presentation

Citation Download Citation

Sang-Kon Kim "Plasmonic computational lithography for below 10-nm patterning", Proc. SPIE 11462, Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XVIII, 114622Y (20 August 2020); https://doi.org/10.1117/12.2570752

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