Paper
8 January 1990 Feedback Direct Injection Current Readout For Infrared Charge-Coupled Devices
K. Kubo, H. Wakayama, N. Kajihara, K. Awamoto, Y. Miyamoto
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Abstract
We are proposing current readout for infrared charge coupled devices (IRCCDs) which can operate at higher temperatures. Feedback direct injection (FDI) consists of a simple amplifier of gain, A<1, connected to a photodiode and a conventional direct injection (DI) circuit. The amplifier feeds the source voltage of an input field-effect transistor back to the photodiode, making the diode's resistance effectively 1/(1-A) times larger. This improves conventional direct injection current readout efficiency. FDI was used in a medium-wavelength IRCCD operating at a high temperature. We made a 64-element HgCdTe linear IRCCD using FDI. The device operates at 195 K with an NETD of 0.5 K.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Kubo, H. Wakayama, N. Kajihara, K. Awamoto, and Y. Miyamoto "Feedback Direct Injection Current Readout For Infrared Charge-Coupled Devices", Proc. SPIE 1157, Infrared Technology XV, (8 January 1990); https://doi.org/10.1117/12.978611
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KEYWORDS
Photodiodes

Resistance

Amplifiers

Field effect transistors

Infrared radiation

Mercury cadmium telluride

Charge-coupled devices

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