Fitting of photoluminescence spectra for structural characterisation of high current density resonant tunnelling diodes for THz applications

Michele Cito; Osamu Kojima; Ben J. Stevens; Toshikazu Mukai; Richard A. Hogg

doi:10.1117/12.2582781

5 March 2021 Fitting of photoluminescence spectra for structural characterisation of high current density resonant tunnelling diodes for THz applications

Michele Cito, Osamu Kojima, Ben J. Stevens, Toshikazu Mukai, Richard A. Hogg

Author Affiliations +

Proceedings Volume 11685, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIV; 1168511 (2021) https://doi.org/10.1117/12.2582781
Event: SPIE OPTO, 2021, Online Only

Abstract

High-resolution X-ray diffraction (HR-XRD), and low-temperature photoluminescence spectroscopy (LT-PL) are used to investigate the structural properties and inhomogeneities of high current density InGaAs/AlAs/InP resonant tunnelling diode (RTD) wafer structures. The non-destructive assessment of these structures is challenging, with structural variables: well and barriers thickness and the well indium molar fraction, in addition to electronic variables such as the band-offsets being functions of strain, growth sequence, etc.. Experimental PL data are compared with simulations allowing the deconvolution of the PL spectra, that includes Type I and Type II transitions broadened by interface fluctuations on length scales smaller and much larger than the exciton. This method provides details of the non-uniformity of the epitaxial material nondestructively.

Conference Presentation

Citation Download Citation

Michele Cito, Osamu Kojima, Ben J. Stevens, Toshikazu Mukai, and Richard A. Hogg "Fitting of photoluminescence spectra for structural characterisation of high current density resonant tunnelling diodes for THz applications", Proc. SPIE 11685, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIV, 1168511 (5 March 2021); https://doi.org/10.1117/12.2582781

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