Development of HD-format 1280 x 1024 InAsSb-on-GaAs two-color MWIR/MWIR and SWIR/MWIR focal-plane array technology

Hasan Sharifi; Sevag Terterian; Clayton Tu; Mark Roebuck; Terry de Lyon

doi:10.1117/12.2585824

12 April 2021 Development of HD-format 1280 x 1024 InAsSb-on-GaAs two-color MWIR/MWIR and SWIR/MWIR focal-plane array technology

Hasan Sharifi, Sevag Terterian, Clayton Tu, Mark Roebuck, Terry de Lyon

Author Affiliations +

Proceedings Volume 11723, Image Sensing Technologies: Materials, Devices, Systems, and Applications VIII; 1172307 (2021) https://doi.org/10.1117/12.2585824
Event: SPIE Defense + Commercial Sensing, 2021, Online Only

Abstract

We discuss our recent work in development of 1280 x 1024/12μm pitch bulk InAsSb MWIR/MWIR twocolor focal planes with cutoff wavelengths of 4.2μm and 5.1μm in the two bands as well as SWIR/MWIR focal planes with cutoff wavelengths of 3.0μm and 4.9μm. Barrier detectors based on the InAsSb materials system have recently been developed to realize substantial improvements in the performance of MWIR detectors operating in a single MWIR wavelength band, enabling FPA performance at operating temperatures as high as 150K. We have extended this detector architecture to encompass two-color detectors operating in a sequential mode utilizing back-to-back barrier devices. These detectors utilize the ternary alloy InAsSb materials system grown by molecular-beam epitaxy on GaAs substrates as a pathway to cost-effective production of large-area focal-plane arrays. Based on extensive FPA characterization, NEDT values of 18.3mK (Band-1) and 14.2mK (Band-2) were measured under f/2.3 illumination at an array operating temperature of T = 120K, with high NEDT operabilities (2x median) of 99.93% and 99.7% in Band-1 and Band-2, respectively. No significant performance degradation was observed in epoxystabilized hybrids after 500 thermal cycles between 300K and 110K. Finally, we discuss the progress that has been made in SWIR/MWIR array development and present measurements of 1280 x 1024 FPA performance for SWIR/MWIR focal planes with cutoff wavelengths of 3.0μm and 4.9μm at T = 120K. NEDT values (f/2.3 illumination) of 18.5mK (SWIR) and 15.0mK (MWIR) and high operabilities of 99.96% (SWIR) and 99.3% (MWIR) for cutoff wavelengths of 3.0μm and 4.9μm were measured.

Conference Presentation

Citation Download Citation

Hasan Sharifi, Sevag Terterian, Clayton Tu, Mark Roebuck, and Terry de Lyon "Development of HD-format 1280 x 1024 InAsSb-on-GaAs two-color MWIR/MWIR and SWIR/MWIR focal-plane array technology", Proc. SPIE 11723, Image Sensing Technologies: Materials, Devices, Systems, and Applications VIII, 1172307 (12 April 2021); https://doi.org/10.1117/12.2585824

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