Dark current improvement by an in-situ plasma treatment on type-II superlattice LWIR photodetectors

Ko-Ku Kang; Seong-Min Ryu; Tae-Hee Lee; Jong Gi Kim; Ahreum Jang; Hyun Chul Jeong; Jun-Ho Eom; Young Chul Kim; Hyun Jin Lee; Young Ho Kim; Han Jung; Sun Ho Kim; Jong Hwa Chi

doi:10.1117/12.2588041

12 April 2021 Dark current improvement by an in-situ plasma treatment on type-II superlattice LWIR photodetectors

Ko-Ku Kang, Seong-Min Ryu, Tae-Hee Lee, Jong Gi Kim, Ahreum Jang, Hyun Chul Jeong, Jun-Ho Eom, Young Chul Kim, Hyun Jin Lee, Young Ho Kim, Han Jung, Sun Ho Kim, Jong Hwa Chi

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Proceedings Volume 11741, Infrared Technology and Applications XLVII; 117411U (2021) https://doi.org/10.1117/12.2588041
Event: SPIE Defense + Commercial Sensing, 2021, Online Only

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Abstract

We report our recent work on the fabrication of type-II superlattice (T2SL) LWIR nBn photodetectors. It is well known that the dangling bonds or the oxidized element on the etched mesa sidewall increase a dark current. Therefore, the passivation and treatment process for the mesa surface is the key for detector performance. In this work, we present an in-situ surface plasma treatment after the dry-etch process for the pixel isolation. To investigate the effects of the plasma treatment for the various gases (CHF₃, H₂, and H₂/Ar), the optical and electrical analysis were performed. The results show that H₂/Ar plasma treatment was effective for removing Sb-oxides at dry-etched surface. The fabricated devices which was measured at -0.1 V and 80 K shows the dark current density of -3.9 ｘ 10^-6A/cm^-2 .

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Ko-Ku Kang, Seong-Min Ryu, Tae-Hee Lee, Jong Gi Kim, Ahreum Jang, Hyun Chul Jeong, Jun-Ho Eom, Young Chul Kim, Hyun Jin Lee, Young Ho Kim, Han Jung, Sun Ho Kim, and Jong Hwa Chi "Dark current improvement by an in-situ plasma treatment on type-II superlattice LWIR photodetectors", Proc. SPIE 11741, Infrared Technology and Applications XLVII, 117411U (12 April 2021); https://doi.org/10.1117/12.2588041

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