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4 August 2021 Exact doping of semiconductor nanomaterials and X-ray characterizations
Marcell Pálmai, EunByoel Kim, Kyle Tomczak, Xiaoyi Zhang, Preston T. Snee
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Proceedings Volume 11800, Low-Dimensional Materials and Devices 2021; 1180004 (2021) https://doi.org/10.1117/12.2595461
Event: SPIE Nanoscience + Engineering, 2021, San Diego, California, United States
Abstract
Semiconductor Quantum Dots (QDs) have great potential in applications for renewable energy generation due to their size-tunable redox potentials. QDs may also be doped to manipulate their electronic structure. Our group developed a method to dope each quantum dot with an exact number of guest ions by nucleating the QD around an organometallic seed cluster that contains guest ions. As a result, each QD has the same number of dopants, which eliminates problems due to inhomogeneity of the dot stoichiometry. These materials were studied using time-resolved X-ray absorption spectroscopy, which allows us to characterize the electronic and coordination structure in both the ground and excited states. It was found that, when dopants interact with charge carriers, they may alter their bonding to the underlying matrix. This phenomenon of charge carrier modulation of dopant bonding has a strong effect on the conductivity properties of doped semiconductors.
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Marcell Pálmai, EunByoel Kim, Kyle Tomczak, Xiaoyi Zhang, and Preston T. Snee "Exact doping of semiconductor nanomaterials and X-ray characterizations", Proc. SPIE 11800, Low-Dimensional Materials and Devices 2021, 1180004 (4 August 2021); https://doi.org/10.1117/12.2595461
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KEYWORDS
Nanomaterials
Doping
X-ray characterization
Semiconductors
Algorithm development
Ions
Quantum dots
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