Validation of the effects of growth parameter variations on the optical characteristics of InAs QD through Nextnano simulations

Suryansh Dongre; Debiprasad Panda; Debabrata Das; SanowarAlam Gazi; Ravindra Kumar; Mahitosh Biswas; Arjun Mandal; Subhananda Chakrabarti

doi:10.1117/12.2594397

1 August 2021 Validation of the effects of growth parameter variations on the optical characteristics of InAs QD through Nextnano simulations

Suryansh Dongre, Debiprasad Panda, Debabrata Das, SanowarAlam Gazi, Ravindra Kumar, Mahitosh Biswas, Arjun Mandal, Subhananda Chakrabarti

Author Affiliations +

Proceedings Volume 11802, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVIII; 118020W (2021) https://doi.org/10.1117/12.2594397
Event: SPIE Nanoscience + Engineering, 2021, San Diego, California, United States

Conference Poster

Abstract

Stranski-Krastanov (SK) Quantum dots (QDs) based lasers and detectors are now used in many fields because of the plentiful advantages they offer, some of which are normal incident absorption and phonon bottleneck. In order to optimize the properties of the devices, growth parameters have to be tuned properly. The effects of growth temperature (GT) and growth rate (GR) variations on the QD devices have been studied here by comparing simulations and experiments. In this study, InAs QDs are grown on GaAs substrates with four different temperatures, from 480°C to 510°C, and with five different GRs, from 0.15 ML/s to 0.025ML/s. To observe the grown heterostructures' structural and optical properties photoluminescence (PL) and PL excitation (PLE) have been performed on the samples. The size, shape, and composition of the QDs ultimately decide the energy levels in the heterostructure. Hence, it determines the optical and electrical properties of the devices. Here we simulated 3-D strain profiles of the QD and compared the results with PL and PLE. The trends in simulated biaxial strain and heavy hole (HH) - light hole (LH) band splitting, observed in the PLE, match pretty well. We observed that the change in GT drastically affects the composition of the dots and the wetting layer, whereas a change in GR only changes the lateral size of the QDs, and do not affect the strain or composition. These studies can be beneficial for p-i-p short-wave infrared (SWIR) detectors since their spectral response is tuned by the HH-LH band splitting.

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Suryansh Dongre, Debiprasad Panda, Debabrata Das, SanowarAlam Gazi, Ravindra Kumar, Mahitosh Biswas, Arjun Mandal, and Subhananda Chakrabarti "Validation of the effects of growth parameter variations on the optical characteristics of InAs QD through Nextnano simulations", Proc. SPIE 11802, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVIII, 118020W (1 August 2021); https://doi.org/10.1117/12.2594397

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