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1 August 2021 Direct imaging of current-induced antiferromagnetic switching revealing a pure thermomagnetoelastic switching mechanism in NiO
Hendrik Meer, Felix Schreiber, Christin Schmitt, Rafael Ramos, Eiji Saitoh, Olena Gomonay, Jairo Sinova, Lorenzo Baldrati, Mathias Kläui
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Proceedings Volume 11805, Spintronics XIV; 118050T (2021) https://doi.org/10.1117/12.2595418
Event: SPIE Nanoscience + Engineering, 2021, San Diego, California, United States
Abstract
We unambiguously identify the origin of the current-induced magnetic switching of insulating antiferromagnet/heavy metal bilayers. Previously, different reorientations of the Néel order for the same current direction were reported for different device geometries and different switching mechanisms were proposed. Here, we combine concurrent electrical readout and optical imaging of the switching of antiferromagnetic domains with simulations of the current-induced temperature and strain gradients. By comparing the switching in specially engineered NiO/Pt device and pulsing geometries, we can rule out spin-orbit torque based mechanisms and identify a thermomagnetoelastic mechanism to dominate the switching of antiferromagnetic domains, reconciling previous reports.
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Hendrik Meer, Felix Schreiber, Christin Schmitt, Rafael Ramos, Eiji Saitoh, Olena Gomonay, Jairo Sinova, Lorenzo Baldrati, and Mathias Kläui "Direct imaging of current-induced antiferromagnetic switching revealing a pure thermomagnetoelastic switching mechanism in NiO", Proc. SPIE 11805, Spintronics XIV, 118050T (1 August 2021); https://doi.org/10.1117/12.2595418
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KEYWORDS
Switching
Atomic force microscopy
Birefringence
Dielectrics
Magnetism
Metals
Microscopy
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