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1 August 2021 Efficient spin-orbit-torque magnetization switching in a spin-orbit ferromagnetic-semiconductor (Ga,Mn)As single layer
Shinobu Ohya, Miao Jiang, Hirokatsu Asahara, Shoichi Sato, Masaaki Tanaka
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Proceedings Volume 11805, Spintronics XIV; 118051N (2021) https://doi.org/10.1117/12.2595843
Event: SPIE Nanoscience + Engineering, 2021, San Diego, California, United States
Abstract
Spin-orbit torque (SOT) magnetization switching is an efficient method to control magnetization. In SOT switching, controlling a field-like torque strength is indispensable to reduce the critical current density; however, this is difficult because the field-like torque is intrinsic to the material system used. Here, we show that it can be suppressed in a spin-orbit ferromagnet single layer of (Ga,Mn)As by a current-induced Oersted field due to its strong Dresselhaus spin-orbit coupling and non-uniform current distribution. We obtained an extremely low switching current density of 4.6×10^4 A/cm^2, three orders of magnitude smaller than that observed in typical metal bilayers.
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Shinobu Ohya, Miao Jiang, Hirokatsu Asahara, Shoichi Sato, and Masaaki Tanaka "Efficient spin-orbit-torque magnetization switching in a spin-orbit ferromagnetic-semiconductor (Ga,Mn)As single layer", Proc. SPIE 11805, Spintronics XIV, 118051N (1 August 2021); https://doi.org/10.1117/12.2595843
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KEYWORDS
Switching
Control systems
Energy efficiency
Metals
Scientific research
Spintronics
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