Ablation-Technique and Image Reversal in Ion-Exposed Resists by Excimer-Laser-Radiation

Guenther Stangl; Ewald Cekan; Wolfgang Fallmann

doi:10.1117/12.963808

12 April 1990 Ablation-Technique and Image Reversal in Ion-Exposed Resists by Excimer-Laser-Radiation

Guenther Stangl, Ewald Cekan, Wolfgang Fallmann

Proceedings Volume 1183, Holography '89; (1990) https://doi.org/10.1117/12.963808
Event: Holography '89, 1989, Varna, Bulgaria

Abstract

A Lamda Physics EMG 102E excimer laser operating at wave-lengths of 248nm (KrF) and 193nm (ArF) was employed either to transfer structures by 1 : 1 shadow printing from a micromask onto a resist coated wafer using ablation technique or to develop ion exposed resists by blanket exposure at the ArF line.

Citation Download Citation

Guenther Stangl, Ewald Cekan, and Wolfgang Fallmann "Ablation-Technique and Image Reversal in Ion-Exposed Resists by Excimer-Laser-Radiation", Proc. SPIE 1183, Holography '89, (12 April 1990); https://doi.org/10.1117/12.963808

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