A Multichamber Integrated-Processing UHV System For The Formation Of Silicon Heterostructures On Three-Inch Wafers

J. T. Fitch; J. J. Sumakeris; G. Lucovsky

doi:10.1117/12.963937

15 February 1990 A Multichamber Integrated-Processing UHV System For The Formation Of Silicon Heterostructures On Three-Inch Wafers

J. T. Fitch, J. J. Sumakeris, G. Lucovsky

Author Affiliations +

Proceedings Volume 1188, Multichamber and In-Situ Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963937
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

This paper describes the design and construction of a multichamber integrated dielectric processing system. We describe a methodology for managing the design process of complex integrated-processing systems which includes model building and computer aided design. The advantages of a flexible modular approach to integrated processing are discussed. The finished system has three processing and analysis modules networked by a central server with capabilities for (i) remote plasma enhanced chemical vapor deposition (PECVD) of dielectric films, (ii) downstream cleaning of semiconductor surfaces, and (iii) in-situ materials characterization by Auger electron spectroscopy (AES) and reverse view low energy electron diffraction (LEED). With this integrated processing system we have the capability of depositing and analyzing Si-based heterostructures which can be fabricated to include any combination of silicon oxide; silicon nitride; silicon oxynitride; and amorphous, microcrystalline, or polycrystalline silicon layers.

Citation Download Citation

J. T. Fitch, J. J. Sumakeris, and G. Lucovsky "A Multichamber Integrated-Processing UHV System For The Formation Of Silicon Heterostructures On Three-Inch Wafers", Proc. SPIE 1188, Multichamber and In-Situ Processing of Electronic Materials, (15 February 1990); https://doi.org/10.1117/12.963937

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