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A complementary coplanar interdigital electrode photoconductive switch based on vanadium-nitrogen doped 4H-SiC bulk material was developed. The test results show that the combination of vanadium doping and coplanar interdigital electrode structure, the voltage capability of 4H-SiC photoconductive switch is significantly improved and the conductive resistance of 4H-SiC photoconductive switch under low light intensity is reduced. The bias voltage of 4H-SiC photoconductive switch is 10kV. The conductive resistance of 4H-SiC photoconductive switch excited by 0.4mJ 532nm laser is 50Ω. In a 50 Ω microwave system, the peak power output by the load is 0.5MW. By continuously increasing the injected laser energy to 2mj, the on resistance can be reduced to 6 Ω. The results show that the developed vanadium-nitrogen doped 4H-SiC photoconductive switch has the characteristics of stable output waveform, small jitter and high power. The developed vanadium-nitrogen doped 4H-SiC photoconductive switch has certain application value.
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