Model based mask process correction for EUV Mask

Mohamed Ramadan; Brian Dillon; Michael Green; Chris Progler; Young Ham; Ahmad Syukri

doi:10.1117/12.2601855

23 August 2021 Model based mask process correction for EUV Mask

Mohamed Ramadan, Brian Dillon, Michael Green, Chris Progler, Young Ham, Ahmad Syukri

Proceedings Volume 11908, Photomask Japan 2021: XXVII Symposium on Photomask and Next-Generation Lithography Mask Technology; 1190804 (2021) https://doi.org/10.1117/12.2601855
Event: Photomask Japan 2021, 2021, Online Only

Abstract

Mask process correction (MPC) played a key part improving yield in 14 nm technology node and below using deep ultraviolet lithography (DUVL). Extreme ultraviolet lithography (EUVL) is entering an industry production phase for 7 nm logic and is under development for next node logic and memory applications. A key benefit of EUVL for logic interconnect lithography comes from the ability to pattern layers at aggressive pitch using a single exposure. Mask critical dimension targeting was found to be a critical factor for yielding wafer process, MPC will be necessary to correct for mask process errors. This paper will focus on building MPC models for EUV mask processes exposed on a variable shape beam lithography tool.

Citation Download Citation

Mohamed Ramadan, Brian Dillon, Michael Green, Chris Progler, Young Ham, and Ahmad Syukri "Model based mask process correction for EUV Mask", Proc. SPIE 11908, Photomask Japan 2021: XXVII Symposium on Photomask and Next-Generation Lithography Mask Technology, 1190804 (23 August 2021); https://doi.org/10.1117/12.2601855

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