Photoinduced doping effect to manipulate interfacial terahertz emission from van der Waals heterostructures

Wanyi Du; Zhen Lei; Yuanyuan Huang; He Wang; Jiawei Chang; Xinlong Xu

doi:10.1117/12.2604311

9 September 2021 Photoinduced doping effect to manipulate interfacial terahertz emission from van der Waals heterostructures

Wanyi Du, Zhen Lei, Yuanyuan Huang, He Wang, Jiawei Chang, Xinlong Xu

Author Affiliations +

Proceedings Volume 11909, Tenth International Symposium on Ultrafast Phenomena and Terahertz Waves (ISUPTW 2021); 119090C (2021) https://doi.org/10.1117/12.2604311
Event: Tenth International Symposium on Ultrafast Phenomena and Terahertz Waves (ISUPTW 2021), 2021, Chengdu, China

Abstract

Two-dimensional/ three-dimensional (2D/3D) van der Waals (vdW) heterostructures are one of the most potential candidates for table-top pulse terahertz (THz) emitters. Hence, manipulating carrier information at the interface is important to optimize THz emission performance. Photoinduced doping is an effective way to embellish the carrier characteristic at the interface. Here, we applied the photoinduced doping effect to dynamically manipulate the THz generation process from graphene-silicon (Gr-Si) heterostructure. When photoinduced doping is applied by using 532 nm continuous wave (CW) laser, THz radiation decreases with the increase of CW pump power at the reverse bias. The photoinduced doping attenuates the interfacial built-in electric field, resulting in the decrease of transient photocurrent and further reduction of THz radiation. This photogenerated carrier screening effect has achieved a 95.4% intrinsic THz modulation depth (MD) at the external excitation of 200 mW CW laser under reverse bias voltage -30 V. The intrinsic THz MD is much higher than previous report value due to the optimized heterostructure fabrication and the optimized light spot overlap of CW laser and femtosecond laser. This work proposes a non-destructive and reversible method to actively manipulate the THz emission at the vdW interface and provides an optimized route to realize high intrinsic THz MD in THz region.

Citation Download Citation

Wanyi Du, Zhen Lei, Yuanyuan Huang, He Wang, Jiawei Chang, and Xinlong Xu "Photoinduced doping effect to manipulate interfacial terahertz emission from van der Waals heterostructures", Proc. SPIE 11909, Tenth International Symposium on Ultrafast Phenomena and Terahertz Waves (ISUPTW 2021), 119090C (9 September 2021); https://doi.org/10.1117/12.2604311

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KEYWORDS

Terahertz radiation

Doping

Interfaces

Heterojunctions

Continuous wave operation

Graphene

Modulation

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