Multi-watt (AlGaIn)(AsSb) diode lasers between 1.9µm and 2.3µm

J. Neukum; P. Friedmann; S. Hilzensauer; D. Rapp; H. Kissel; J. Gilly; M. T. Kelemen

doi:10.1117/12.2607747

4 March 2022 Multi-watt (AlGaIn)(AsSb) diode lasers between 1.9μm and 2.3μm

J. Neukum, P. Friedmann, S. Hilzensauer, D. Rapp, H. Kissel, J. Gilly, M. T. Kelemen

Proceedings Volume 11983, High-Power Diode Laser Technology XX; 119830H (2022) https://doi.org/10.1117/12.2607747
Event: SPIE LASE, 2022, San Francisco, California, United States

Abstract

High power diode lasers emitting at wavelengths between 1900 nm and 2300 nm open a wide range of defence applications as compact and efficient light sources in the fields of infrared countermeasures (IRCM) or pumping of solidstate lasers emitting in the 2-4μm regime as well as civilian applications in the fields of laser surgery and medical diagnostics. For all these applications multi-watt output power, long lifetimes, a low-cost packaging technology and fiber coupling are requested. Diode lasers fabricated using the (AlGaIn)(AsSb) materials system are naturally predestined for this wavelength range and offer clear advantages in comparison to InP based diode lasers in terms of output power and wall-plug efficiency. Laser structures for different wavelengths between 1900nm and 2300nm designed for <40° fast axis far field (FWHM) were grown on (100)-oriented 3-inch n-type GaSb:Te substrates by solid-source molecular beam epitaxy. Gain-guided broad-area lasers with stripe widths of 100μm, 150μm and 200μm and different resonator lengths have been fabricated using standard optical lithography combined with ICP etching techniques for lateral patterning. The wafers were cleaved either into single emitters with different resonator lengths or as laser arrays. The lasers can be soldered by soft solder as well as hard solder. Depending on the resonator design and the wavelength, these single emitters offer up to 1.7W in cw operation and more than 5.8W in µs-pulsed operation with efficiencies well beyond 25% and with demonstrated long lifetime. For even higher power levels linear arrays of 20 broad area emitters offer up to 20W cw output power or 30W in pulsed mode.

Conference Presentation

Citation Download Citation

J. Neukum, P. Friedmann, S. Hilzensauer, D. Rapp, H. Kissel, J. Gilly, and M. T. Kelemen "Multi-watt (AlGaIn)(AsSb) diode lasers between 1.9μm and 2.3μm", Proc. SPIE 11983, High-Power Diode Laser Technology XX, 119830H (4 March 2022); https://doi.org/10.1117/12.2607747

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