GaN-based solar cells degradation kinetics investigated at high temperature under high-intensity 405nm optical stress

Alessandro Caria; Carlo De Santi; Marco Nicoletto; Matteo Buffolo; Xuanqi Huang; Houqiang Fu; Hong Chen; Yuji Zhao; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini

doi:10.1117/12.2608680

5 March 2022 GaN-based solar cells degradation kinetics investigated at high temperature under high-intensity 405nm optical stress

Alessandro Caria, Carlo De Santi, Marco Nicoletto, Matteo Buffolo, Xuanqi Huang, Houqiang Fu, Hong Chen, Yuji Zhao, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Author Affiliations +

Proceedings Volume 12001, Gallium Nitride Materials and Devices XVII; 1200107 (2022) https://doi.org/10.1117/12.2608680
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

GaN-based solar cells are promising devices for application in space environment, concentrator solar systems and wireless power transmission. Thus, it is essential to understand their degradation kinetics when submitted to high-temperature, high-intensity stress. We submitted GaN-based multiple-quantum-well solar cells with AlGaN electron-blocking-layer to two step-stress experiments at 35 °C and 175 °C in short-circuit condition under 405 nm monochromatic excitation by increasing optical power from 47 W/cm² to 375 W/cm². We found almost no degradation in the dark-IV, light-IV, electroluminescence and photocurrent characteristics after low-temperature stress, whereas the degradation after hightemperature stress was significant: we observed a lowering in power-conversion efficiency, a decrease in open-circuit voltage and an increase in low forward bias current. We then submitted the device to several constant power stress at 180 W/cm² for 100 hours at 95 °C, 135 °C and 175 °C. We found that, by increasing the temperature, the short-circuit current during the stress decreased of 7%, 9% and 12.5% respectively. Dark IV characteristics showed an increase in low-forward bias current stronger at 175 °C. We also found a higher decrease in open-circuit voltage, external quantum efficiency, power conversion efficiency and electroluminescence with higher stress temperature. The causes of degradation are possibly diffusion mechanisms, which increase defect density in the p-GaN bulk region and/or in the GaN barrier region, promoting trap-assisted tunneling mechanisms, leading to the decrease in open-circuit voltage, and non-radiative recombination mechanisms, that cause the drop in quantum efficiency.

Conference Presentation

Citation Download Citation

Alessandro Caria, Carlo De Santi, Marco Nicoletto, Matteo Buffolo, Xuanqi Huang, Houqiang Fu, Hong Chen, Yuji Zhao, Gaudenzio Meneghesso, Enrico Zanoni, and Matteo Meneghini "GaN-based solar cells degradation kinetics investigated at high temperature under high-intensity 405nm optical stress", Proc. SPIE 12001, Gallium Nitride Materials and Devices XVII, 1200107 (5 March 2022); https://doi.org/10.1117/12.2608680

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available