Longitudinal spatial hole burning and associated non-uniform current and carrier density profile as a power limit in high power diode lasers

S. Arslan; H. Wenzel; J. Fricke; A. Thies; A. Ginolas; C. Stölmacker; A. Maaßdorf; B. Eppich; R. B. Swertfeger; S. K. Patra; R. J. Deri; M. C. Boiselle; D. L. Pope; P. O. Leisher; G. Tränkle; P. Crump

doi:10.1117/12.2609391

3 March 2022 Longitudinal spatial hole burning and associated non-uniform current and carrier density profile as a power limit in high power diode lasers

S. Arslan, H. Wenzel, J. Fricke, A. Thies, A. Ginolas, C. Stölmacker, A. Maaßdorf, B. Eppich, R. B. Swertfeger, S. K. Patra, R. J. Deri, M. C. Boiselle, D. L. Pope, P. O. Leisher, G. Tränkle, P. Crump

Author Affiliations +

Proceedings Volume 12021, Novel In-Plane Semiconductor Lasers XXI; 120210F (2022) https://doi.org/10.1117/12.2609391
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

Asymmetric photon density (recombination-rate) along the high-power diode laser cavity leads to longitudinal-spatialhole- burning (LSHB), which limits maximum output power. Here, we summarize recent investigations on the impact of LSHB on current (longitudinal) and carrier (lateral and longitudinal) density distribution and hence total-recombination for continuous-wave (CW) operations. Custom diode lasers with 90 μm stripe and 3000-6000 μm resonator have been fabricated with segmented p-side contact to measure local current density and backside metallization window to measure relative carrier density (via spontaneous intensity) and infer temperature (via wavelength). Also, 98% back facet reflectivity and 0.8% and 20% front facet reflectivities have been used to vary the photon density profile and hence severity of hole-burning. We present data showing that current crowds at the front facet due to the high recombinationrate, which becomes more severe as the bias and resonator length increase. The current crowding effect is reduced using higher front facet reflectivity. Longitudinal one-dimensional simulation is broadly consistent with experiments at low bias; however, the current crowding effect is substantially stronger in the experiment than simulation at high bias. Further, spatially-resolved-spontaneous-emission measurements of intensity and wavelength demonstrate that the longitudinal carrier density is also non-uniform with a higher carrier density at the back facet for 0.8% front facet reflectivity, even at low bias, while it is flat for devices with 20%. At high bias, temperature increases at the front facet, leading to lateral carrier accumulation at the stripe edges, higher current and carrier density, which is not included in the simulation.

Conference Presentation

Citation Download Citation

S. Arslan, H. Wenzel, J. Fricke, A. Thies, A. Ginolas, C. Stölmacker, A. Maaßdorf, B. Eppich, R. B. Swertfeger, S. K. Patra, R. J. Deri, M. C. Boiselle, D. L. Pope, P. O. Leisher, G. Tränkle, and P. Crump "Longitudinal spatial hole burning and associated non-uniform current and carrier density profile as a power limit in high power diode lasers", Proc. SPIE 12021, Novel In-Plane Semiconductor Lasers XXI, 120210F (3 March 2022); https://doi.org/10.1117/12.2609391

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available