In scanning electron microscope (SEM) image simulation, it is necessary to consider the charging of electron beam irradiation, which can be computationally intensive. Therefore, we have developed a neural network-based algorithm to generate SEM images by inputting the shape and material properties of semiconductor devices, after which various preprocesses are applied to the physical parameters to improve the accuracy. The contrast and visibility of the generated images are then compared with simulation results that are not included in the training dataset. As a preliminary result, we found that the physical parameters that affect charging, such as the relative permittivity and electron mobility of the material, can be predicted. The effect of acceptance is also considered in the training process to reproduce the changes in image quality depending on the type and arrangement of detectors.
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