A junction temperature estimation method of SiC power module for real time application in a traction inverter

Yangjun Zheng; Yaru Xue; Yong Li; Yaoheng Li; Guangming Zhou; Jiangtao Gai; Ying Zhang; Guohui Li; Zhibin Shuai

doi:10.1117/12.2619311

29 November 2021 A junction temperature estimation method of SiC power module for real time application in a traction inverter

Yangjun Zheng, Yaru Xue, Yong Li, Yaoheng Li, Guangming Zhou, Jiangtao Gai, Ying Zhang, Guohui Li, Zhibin Shuai

Author Affiliations +

Proceedings Volume 12080, 4th International Symposium on Power Electronics and Control Engineering (ISPECE 2021); 120801K (2021) https://doi.org/10.1117/12.2619311
Event: 4th International Symposium on Power Electronics and Control Engineering (ISPECE 2021), 2021, Nanchang, China

Abstract

SiC MOSFET is a kind of promising power device for transportation electrification. In electrified vehicles, SiC inverters show strong competitiveness for its high efficiency and power density, especially for high-performance applications. A SiC power module generally consists of multiple MOSFET dies and Diode dies. Junction temperature estimation of different dies in different operation points is a critical problem for practical applications. In this article, power loss of SiC devices in a motor inverter is analysed and calculated in the time scale of switching period. Subsequently, a junction temperature estimation method combining 1D foster thermal model and 3D FEM thermal model is proposed. The maximum junction temperature in a SiC power module can be estimated with low computational burden. Working boundary with varying sine current amplitude and switching frequency can also be obtained for real-time control of motor inverters. The effectiveness and practicability of the proposed method is verified with transition simulation.

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Yangjun Zheng, Yaru Xue, Yong Li, Yaoheng Li, Guangming Zhou, Jiangtao Gai, Ying Zhang, Guohui Li, and Zhibin Shuai "A junction temperature estimation method of SiC power module for real time application in a traction inverter", Proc. SPIE 12080, 4th International Symposium on Power Electronics and Control Engineering (ISPECE 2021), 120801K (29 November 2021); https://doi.org/10.1117/12.2619311

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KEYWORDS

Silicon carbide

Thermal modeling

Switching

Field effect transistors

3D modeling

Finite element methods

Diodes

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