Interface features and electronic structure of Bi2SiO5/β-Bi2O3 hetero-junction

E. A. Kovaleva; O. V. Vodyankina; V. A. Svetlichny

doi:10.1117/12.2614020

2 December 2021 Interface features and electronic structure of Bi₂SiO₅/β-Bi₂O₃ hetero-junction

E. A. Kovaleva, O. V. Vodyankina, V. A. Svetlichny

Proceedings Volume 12086, XV International Conference on Pulsed Lasers and Laser Applications; 120860F (2021) https://doi.org/10.1117/12.2614020
Event: XV International Conference on Pulsed Lasers and Laser Applications, 2021, Tomsk, Russian Federation

Abstract

Atomic and electronic structure of Bi₂SiO₅/β-Bi₂O₃ hetero-junction was described by means of density functional theory. The interface was found to be narrow-gap semiconductor with indirect band gap. The redistribution of states near the Fermi level in hybrid structure and the impact of spin-orbit coupling are discussed.

Citation Download Citation

E. A. Kovaleva, O. V. Vodyankina, and V. A. Svetlichny "Interface features and electronic structure of Bi₂SiO₅/β-Bi₂O₃ hetero-junction", Proc. SPIE 12086, XV International Conference on Pulsed Lasers and Laser Applications, 120860F (2 December 2021); https://doi.org/10.1117/12.2614020

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