Presentation + Paper
24 May 2022 New critical dimension optical metrology for submicron high-aspect-ratio structures using spectral reflectometry with supercontinuum laser illumination
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Abstract
The article presents a novel optical metrology method for accurate critical dimension (CD) measurement of sub-micrometer structures with high spatial resolution and light efficiency. The proposed method takes advantage of the spatially coherent nature of the supercontinuum laser to detect submicron-scale structures with high aspect ratios. By using the method, CD measurement of individual microstructures such as vias and redistribution layers (RDL) becomes achievable when a high magnification optical configuration is incorporated. Proved by a test run on measuring submicron structures with linewidths as small as 0.7 μm and an aspect ratio over 4, the measurement precision of the depth can be kept within a few nanometers.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei-Hsin Chein, Fu-Sheng Yang, Komal Thakur, Guo-Wei Wu, and Liang-Chia Chen "New critical dimension optical metrology for submicron high-aspect-ratio structures using spectral reflectometry with supercontinuum laser illumination", Proc. SPIE 12137, Optics and Photonics for Advanced Dimensional Metrology II, 121370E (24 May 2022); https://doi.org/10.1117/12.2621895
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KEYWORDS
Reflectometry

Image processing

Laser metrology

Scanning electron microscopy

Spectroscopy

Critical dimension metrology

Etching

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