Michael E. Hoenk,1 April D. Jewell,1 Gillian Kyne,1 John Hennessy,1 Todd Jones,1 Samuel Cheng,1 Shouleh Nikzad,1 David Morris,2 Katherine Lawrie,2 Jesper Skottfelthttps://orcid.org/0000-0003-1310-82833
1California Institute of Technology (United States) 2Teledyne e2v (United Kingdom) 3The Open Univ. (United Kingdom)
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In this paper we review the physics and performance of back-illuminated CCDs. Models of back-illuminated CCDs are used to derive requirements for stable, strong surface passivation in space-relevant environments. Models and data are used to compare state-of-the-art surface passivation methods with 2D-doped surfaces. MBE growth of 2D-doped silicon on back-illuminated CCDs and CMOS image sensors enables near 100% charge collection efficiency with exceptional stability in space and other harsh environments. Lifetime tests performed on 2D-doped CMOS image sensors using pulsed DUV lasers have demonstrated the unique stability of 2D-doped detectors against high levels of radiation-induced surface damage. The insensitivity of 2D-doped detectors to Si-SiO2 traps has facilitated the development of a variety of coatings and filters with science-enabling capabilities for NASA instruments and missions in the far and near ultraviolet spectral range. We discuss the status and goals of a strategic partnership between JPL and Teledyne e2v for the certification of 2Ddoping processes, and report initial results from our collaboration.
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Michael E. Hoenk, April D. Jewell, Gillian Kyne, John Hennessy, Todd Jones, Samuel Cheng, Shouleh Nikzad, David Morris, Katherine Lawrie, Jesper Skottfelt, "2D-doped silicon detectors for UV/optical/NIR and x-ray astronomy," Proc. SPIE 12191, X-Ray, Optical, and Infrared Detectors for Astronomy X, 1219113 (29 August 2022); https://doi.org/10.1117/12.2631542