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We present InP-based Triple Barrier Resonant Tunneling Diodes monolithically integrated with an on-wafer resonant or broad band antenna. Biasing these diodes in the negative differential resistance regime provides a fundamental mode oscillation of preliminary 90 μW at f0 = 260 GHz. At 280 GHz an estimated high zero-bias resonant responsivity of 50.000 V/W is modeled. A broad band average responsivity of 900 V·W-1 was determined in the frequency range from 230 … 330 GHz along with a minimum Noise Equivalent Power of 1 pW·Hz-0.5. This concept is expected to provide very high sensitivities at frequencies up to f ≥ 1 THz.
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W. Prost, K. Arzi, S. Clochiatti, E. Mutlu, S. Suzuki, M. Asada, Nils Weimann, "Triple barrier resonant tunneling diodes for THz emission and sensing," Proc. SPIE 12230, Terahertz Emitters, Receivers, and Applications XIII, 122300D (30 September 2022); https://doi.org/10.1117/12.2632368