Presentation + Paper
30 September 2022 Silicon-based all-electronic quasi-optical pairs for THz frequency range
Dmytro B. But, Kęstutis Ikamas, Albert Cesiul, Alexander Chernyadiev, Cezary Kolacinski, Ieva Morkunaite, Alvydas Lisauskas
Author Affiliations +
Abstract
In this paper, we address the state-of-the-art of CMOS-based electronic sources and detectors developed for the THz frequency range. In particular, we present a system operating at 250 GHz exhibiting input power-related signal-to-noise ratio (SNR) exceeding 70 dB in the direct detection regime for one Hz equivalent noise bandwidth. It combines the state-of-the-art detector based on CMOS field-effect-transistors (FET) and a voltage-controlled oscillator (VCO) employing SiGe bipolar transistors provided by the BiCMOS process. The manuscript presents different emitter–detector pair operation modalities, including data transmission, spectroscopy, and imaging.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dmytro B. But, Kęstutis Ikamas, Albert Cesiul, Alexander Chernyadiev, Cezary Kolacinski, Ieva Morkunaite, and Alvydas Lisauskas "Silicon-based all-electronic quasi-optical pairs for THz frequency range", Proc. SPIE 12230, Terahertz Emitters, Receivers, and Applications XIII, 122300J (30 September 2022); https://doi.org/10.1117/12.2633904
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KEYWORDS
Oscillators

Terahertz radiation

Sensors

Silicon

Field effect transistors

Antennas

CMOS technology

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