In this paper, we address the state-of-the-art of CMOS-based electronic sources and detectors developed for the THz frequency range. In particular, we present a system operating at 250 GHz exhibiting input power-related signal-to-noise ratio (SNR) exceeding 70 dB in the direct detection regime for one Hz equivalent noise bandwidth. It combines the state-of-the-art detector based on CMOS field-effect-transistors (FET) and a voltage-controlled oscillator (VCO) employing SiGe bipolar transistors provided by the BiCMOS process. The manuscript presents different emitter–detector pair operation modalities, including data transmission, spectroscopy, and imaging.
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