The evaluation of chipping on single-crystal silicon carbide (SiC) dicing machining using sintered diamond blades

Ping Wang; Mian Li; Lihua Gao; Hui Meng; Dekui Mu

doi:10.1117/12.2634895

25 April 2022 The evaluation of chipping on single-crystal silicon carbide (SiC) dicing machining using sintered diamond blades

Ping Wang, Mian Li, Lihua Gao, Hui Meng, Dekui Mu

Author Affiliations +

Proceedings Volume 12244, 2nd International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2022); 122440F (2022) https://doi.org/10.1117/12.2634895
Event: 2nd International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2022), 2022, Guilin, China

Abstract

Due to its superior bandwidth, high thermal and electrical conductivity, single-crystal SiC is becoming one of the most commonly employed third-generation wafer materials that are essential for the fabrication of powdered electronic devices. This work presents an experimental investigation on the role of processing parameters in the dicing process of silicon carbide (SiC) wafers. Metal bond diamond blades were successfully sintered and utilized to dice single-crystal SiC along with[1120] and the [1100] directions. Dicing quality was evaluated based on the average chipping size and distribution, as well as the relative Kerf defined as the ratio of kerf width to thickness of diamond blades. Single-crystal SiC diced in [1120] direction had quality better than that diced in the [1100] direction. During SiC dicing process, the chip size on the edge of the dicing groove and the relative kerf width increased with the increase of cutting depth. Increased dicing loads could result in the truncation of diamond abrasives, the smaller the difference in protrusion height, and the lower the chipping. Last but not least, the thickness was found to play a determinant role in the mechanical integrity and hence dicing capability of sintered diamond blades on SiC; the minimum thickness of sintered diamond blades was 200 microns.

Citation Download Citation

Ping Wang, Mian Li, Lihua Gao, Hui Meng, and Dekui Mu "The evaluation of chipping on single-crystal silicon carbide (SiC) dicing machining using sintered diamond blades", Proc. SPIE 12244, 2nd International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2022), 122440F (25 April 2022); https://doi.org/10.1117/12.2634895

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
7 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Silicon carbide

Diamond

Abrasives

Semiconducting wafers

Diamond machining

Manufacturing

Wafer dicing

Keywords/Phrases

Search In:

Publication Years