Massive tiny MoSi defect reduction in NCAR photoresist blank

Joyce Wang; Ansel Huang; Mazer Li; Josh Cheng; Bin Lin; Ewin Zhuo; Gerrard Chen; Kevin Yu; Yu-Kuang Huang; Zack Huang

doi:10.1117/12.2640450

15 September 2022 Massive tiny MoSi defect reduction in NCAR photoresist blank

Joyce Wang, Ansel Huang, Mazer Li, Josh Cheng, Bin Lin, Ewin Zhuo, Gerrard Chen, Kevin Yu, Yu-Kuang Huang, Zack Huang

Proceedings Volume 12325, Photomask Japan 2022: XXVIII Symposium on Photomask and Next-Generation Lithography Mask Technology; 123250C (2022) https://doi.org/10.1117/12.2640450
Event: Photomask Japan 2022, 2022, Online Only

Abstract

It is well known that with the development of advanced semiconductor technology, the phase shift mask (PSM) has been widely utilized in the semiconductor lithography process. Usually, the PSM blank coated with negative chemically amplified resist (NCAR) was used for fabrication of AA (Active area) layer and Poly layer mask which utilized in the logic semiconductor products. Under the electron beam (EB) writing systems, this NCAR resist showed better opaque pattern forming ability for complex OPC pattern and sub-resolution assist bar features[1]. In this contribution, a kind of defect so-called tiny MoSi defect that was captured by KLA inspection tool during NCAR mask fabrication process would be described. This kind of defect randomly scattered over the whole mask and located on quartz surface where photo resist was developed for not exposure by electron beam and Cr/MoSi was removed after dry etching process. In order to figure out this problem, we investigated the root cause of tiny MoSi defect by split condition test and cross validation, especially focused on the interaction between each process unit. According to the verification result, we would propose the possible formation mechanism and modify the recipe based on this understanding. The long-term inspection monitoring result showed that this kind defect density could be reduced from two hundred to less than twenty counts after recipe optimization.

Citation Download Citation

Joyce Wang, Ansel Huang, Mazer Li, Josh Cheng, Bin Lin, Ewin Zhuo, Gerrard Chen, Kevin Yu, Yu-Kuang Huang, and Zack Huang "Massive tiny MoSi defect reduction in NCAR photoresist blank", Proc. SPIE 12325, Photomask Japan 2022: XXVIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 123250C (15 September 2022); https://doi.org/10.1117/12.2640450

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KEYWORDS

Etching

Inspection

Photoresist materials

Photomasks

Photoresist developing

Plasma

Manufacturing

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