Ecosystem required for EUV mask curvilinear pattern

Sukho Lee; Raewon Yi; Jihyeon Choi; Eok Bong Kim; Jin Choi; Sanghee Lee

doi:10.1117/12.2642025

15 September 2022 Ecosystem required for EUV mask curvilinear pattern

Sukho Lee, Raewon Yi, Jihyeon Choi, Eok Bong Kim, Jin Choi, Sanghee Lee

Proceedings Volume 12325, Photomask Japan 2022: XXVIII Symposium on Photomask and Next-Generation Lithography Mask Technology; 123250V (2022) https://doi.org/10.1117/12.2642025
Event: Photomask Japan 2022, 2022, Online Only

Abstract

In extreme ultra violate(EUV) era, the resolution is highly improved by its shorter wavelength than ArF lithography. That changes double patterning technology(DPT) or quadratic pattering technology(QPT) process by ArF to single exposure technology(SET) process by EUV. But the number of EUV photons that have same amount of energy in unit area is reduced by 10 times more than that of ArF photons, and it occurs stochastic effect like random bridge and necking defects. In other words, one EUV photon has larger energy than one ArF photon, but the unstable probability to transfer its energy to photo resist(PR) induces the lack of active energy or more of it so that results in the random defects1 . To minimize this problem, it is needed to improve normalized image log slope(NILS). Introducing curvilinear pattern is one of the techniques improves NILS and it seems that optical proximity correction(OPC) is ready for producing them. But for their high complexity, the difficulties of actual implementation on mask are remained. In the paper, we will announce the several difficulties and requirement to raise the maturity for curvilinear pattern mask fabrication.

Citation Download Citation

Sukho Lee, Raewon Yi, Jihyeon Choi, Eok Bong Kim, Jin Choi, and Sanghee Lee "Ecosystem required for EUV mask curvilinear pattern", Proc. SPIE 12325, Photomask Japan 2022: XXVIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 123250V (15 September 2022); https://doi.org/10.1117/12.2642025

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