Monolithically integrated CMOS electronics in zero-change silicon photonics

F. Zanetto; F. Toso; V. Grimaldi; M. Petrini; A. Perino; F. Morichetti; A. Melloni; G. Ferrari; M. Sampietro

doi:10.1117/12.2656104

11 January 2023 Monolithically integrated CMOS electronics in zero-change silicon photonics

F. Zanetto, F. Toso, V. Grimaldi, M. Petrini, A. Perino, F. Morichetti, A. Melloni, G. Ferrari, M. Sampietro

Proceedings Volume 12334, Emerging Applications in Silicon Photonics III; 1233402 (2023) https://doi.org/10.1117/12.2656104
Event: SPIE Photonex, 2022, Birmingham, United Kingdom

Abstract

Monolithic cointegration of electronics and photonics in the same silicon die is expected to enable a new realm of high-performance electro-optical systems for telecommunications, automotive, datacenter and sensing applications. As an alternative to integrating photonic devices into well-established microelectronic technologies, in this paper we report on the integration of CMOS electronic circuits in a commercial Silicon Photonics technology. Transistors with a threshold voltage of 1.84V, a gain factor of 4 μA/V² and an Early voltage of 35V have been obtained by using the same masks as the photonic layer, without any additional technological steps in a truly zero-change paradigm. The paper reports a first application of this novel approach, showing time-multiplexed control of a 16-to-1 optical router enabled by an on-chip analog multiplexer.

Citation Download Citation

F. Zanetto, F. Toso, V. Grimaldi, M. Petrini, A. Perino, F. Morichetti, A. Melloni, G. Ferrari, and M. Sampietro "Monolithically integrated CMOS electronics in zero-change silicon photonics", Proc. SPIE 12334, Emerging Applications in Silicon Photonics III, 1233402 (11 January 2023); https://doi.org/10.1117/12.2656104

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