Diode pumped cryogenically cooled Tm:LuVO4 laser

Karel Veselský; Jan Šulc; Helena Jelínková

doi:10.1117/12.2649139

8 March 2023 Diode pumped cryogenically cooled Tm:LuVO₄ laser

Karel Veselský, Jan Šulc, Helena Jelínková

Proceedings Volume 12399, Solid State Lasers XXXII: Technology and Devices; 123990J (2023) https://doi.org/10.1117/12.2649139
Event: SPIE LASE, 2023, San Francisco, California, United States

Conference Poster

Abstract

We present a temperature influence (in range from 78 up to 300 K) on laser properties of Tm:LuVO₄ vanadate crystal doped with 2 at. % of Tm³⁺. The sample was 2 mm thick plane-parallel face-polished single-crystal without any AR coating. The Tm:LuVO₄ crystal was mounted in temperature-controlled copper holder of the liquid nitrogen cryostat. The 107 mm long semi-hemispherical laser resonator consisted of a flat pumping mirror (T < 95 % @ 788 nm, HR @ 1750-2100 nm) placed inside the cryostat and a curved output coupler (r=150 mm, R=97.5 % @ 1750-2100 nm) placed outside the cryostat. For longitudinal pumping, a fiber coupled laser diode was used. The diode was operating in the pulse regime (5 ms pulse length, 10 Hz repetition rate) at wavelength 788 nm. At 300 K, the laser emission was detected at 1931 nm with negligible power. With a temperature decrease the laser wavelength shifted to 1868 nm and the slope efficiency doubled from 7 % at 200 K up to 15 % at 78 K, while the laser threshold decreased more than five times. The maximum power amplitude of 0.8 W was achieved at 78 K. The quality of laser output beam was very good close to TEM₀₀ mode. Using the SiO₂ birefringent filter, we were able to switch the output wavelength between 1868 and 1931 nm.

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Karel Veselský, Jan Šulc, and Helena Jelínková "Diode pumped cryogenically cooled Tm:LuVO₄ laser", Proc. SPIE 12399, Solid State Lasers XXXII: Technology and Devices, 123990J (8 March 2023); https://doi.org/10.1117/12.2649139

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