Presentation + Paper
14 March 2023 905nm 140W pulse laser diode with 4Stack epitaxy structure for autonomous Lidar
Author Affiliations +
Proceedings Volume 12403, High-Power Diode Laser Technology XXI; 1240307 (2023) https://doi.org/10.1117/12.2648117
Event: SPIE LASE, 2023, San Francisco, California, United States
Abstract
In this study, we present evaluation results of the 905nm pulse laser diode that has power of over 140W adopting 4stack epitaxy structure with 200um×15um emitter size for autonomous vehicle lidar and other lidar applications. The 4stack epitaxy structure was composed of AlGaAs/InGaAs composition and tunnel junction with GaAs and grown by MOCVD. As a results of the characteristic evaluation, 905nm pulse laser diode with 4stack epitaxy obtained an output of about 149.6W under the conditions of 1KHz cycle, 0.01% duty, and 40A input current. Also developed 905nm pulse laser diode achieved an operating voltage of 13V, a horizontal angle of 9.3°, a vertical angle of 29.1°, and peak wavelength of 905.2nm with TO-56 package respectively.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ansik Choi, Jongkeun Park, Jaebong Lee, Younghwan Kim, and Taekyung Kim "905nm 140W pulse laser diode with 4Stack epitaxy structure for autonomous Lidar", Proc. SPIE 12403, High-Power Diode Laser Technology XXI, 1240307 (14 March 2023); https://doi.org/10.1117/12.2648117
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KEYWORDS
Semiconductor lasers

LIDAR

Epitaxy

Gallium arsenide

Aluminum

Quantum tunneling

Fabrication

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