Poster + Paper
17 March 2023 RF circuit design using millimeter wave photonic CMOSFETs for nonlinear optical computing, modeling, and simulation
Author Affiliations +
Conference Poster
Abstract
An Optoelectronic Millimeter Wave MOSFET consists of an MOS transistor, a millimeter wave generating diode and a laser / LED in the drain region, and photon / microwave sensors in the well / substrate regions. The MOSFET, millimeter wave diode, laser, and sensors are integrated as one transistor. When a gate voltage and a drain voltage are applied, the MOSFET is turned on, so as the millimeter wave diode, laser, and sensors. If the MOSFET is turned off, all devices are turned off. Nonlinear optical computing of multiple bandwidths and much higher speeds can be accomplished. A different millimeter wave photonic CMOS model, which generates multiple nonlinear optical and microwave spectrums, is needed. In this report we will look into detailed circuit design using the new nonlinear photonic RF transistor model, including designs of AND / OR / NOR / XOR / OP AMP logic gates. Nonlinear optical filters and polarization are used in these deigns, which are different from traditional IC design.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James N. Pan "RF circuit design using millimeter wave photonic CMOSFETs for nonlinear optical computing, modeling, and simulation", Proc. SPIE 12425, Smart Photonic and Optoelectronic Integrated Circuits 2023, 124250L (17 March 2023); https://doi.org/10.1117/12.2644715
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KEYWORDS
Extremely high frequency

Field effect transistors

Diodes

Semiconductor lasers

Transistors

Light emitting diodes

Avalanche photodetectors

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