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2 March 2023 Surface states and size effects in semiconductor wires of Bi1–xSbx topological insulators
A. Nikolaeva, L. Konopko, T. Huber, I. Popov, G. Para
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Proceedings Volume 12493, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies XI; 124931F (2023) https://doi.org/10.1117/12.2643275
Event: Advanced Topics in Optoelectronics, Microelectronics and Nanotechnologies 2022, 2022, Constanta, Romania
Abstract
We have reported the experimental observation size effects and surface state on semiconductor Bi1-xSbx wires with different diameters and alloy composition. The studied glass-insulated single-crystal wires of Bi1–xSbx semiconductor alloys were prepared by liquid-phase casting in accordance with the Ulitovsky method. The wires of all the studied compositions and diameters had the same orientation as that in the pure bismuth wires (1011 along the wire axis). A comprehensive study of the temperature dependences of resistance at T = 1.5–300 K, longitudinal and transverse magnetoresistance and their angular dependences, and SdH oscillations in magnetic fields up to 14 T as a function of wire diameter has been conducted. It has been found that the manifestation of the quantum size effect in TI wires based on semiconductor Bi1–xSbx alloys near the gapless state leads to an increase in the energy gap by a factor of 4 at wire diameters of 180 nm, and the SdH oscillation periods at H//C1, C2, and C3 quantitatively differ from values for bulk samples of the respective composition. The longitudinal magnetoresistance (Н//I) has a maximum that linearly depends on wire diameter d, Hmax = pF c /ed. In the Bi–8at%Sb and Bi–17at%Sb, the Fermi momentum component pF perpendicular to the magnetic induction vector H exceeds the values for pure Bi by a factor of 2 and 5, respectively. The results are discussed in terms of the manifestation of the quantum size effect and the specific features of TIs in low-dimensional structures that require new approaches and applications.
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A. Nikolaeva, L. Konopko, T. Huber, I. Popov, and G. Para "Surface states and size effects in semiconductor wires of Bi1–xSbx topological insulators", Proc. SPIE 12493, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies XI, 124931F (2 March 2023); https://doi.org/10.1117/12.2643275
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KEYWORDS
Bismuth
Antimony
Semiconductors
Magnetism
Resistance
Dielectrics
Crystals
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