Chemical approach to make the most of EUVL: stochastic effect mitigation with developer and rinse

Hyungju Ryu; Dokyeong Kwon; Jiho Song; Wongi Park; Jinseong Gwak; Haram Ko; Jiyoung Lee; Jinpyoung Kim; Kyungseok Ryu; Sungjo Hwang; Taemin Jeong; Heeyoung Go; Yigwon Kim; Kyoungyong Cho; Sangjin Kim; Changmin Park

doi:10.1117/12.2656415

28 April 2023 Chemical approach to make the most of EUVL: stochastic effect mitigation with developer and rinse

Hyungju Ryu, Dokyeong Kwon, Jiho Song, Wongi Park, Jinseong Gwak, Haram Ko, Jiyoung Lee, Jinpyoung Kim, Kyungseok Ryu, Sungjo Hwang, Taemin Jeong, Heeyoung Go, Yigwon Kim, Kyoungyong Cho, Sangjin Kim, Changmin Park

Author Affiliations +

Proceedings Volume 12494, Optical and EUV Nanolithography XXXVI; 1249404 (2023) https://doi.org/10.1117/12.2656415
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Abstract

EUV lithography has been one of the key factors that enables the continuation of semiconductor scaling beyond N7. While it is a vital technique for the HVM of the most recent advanced logic and DRAM devices, the EUVL still needs more efforts in order to fully exploit its capability and extend the application. One particular aspect that has been considered as of critical importance is the optical/chemical stochastic effects which may cause L/S, contact pattern defects limiting the efficiency of EUVL. The simplest way to alleviate the stochastic effects is to employ the higher EUV exposure dose; however, this approach is impractical as it obviously leads to even lower productivity. In this work, the alternative chemicals - such as EUV PTD developer and NTD rinse which are specifically prepared to overcome the stochastic effects - are examined to enhance the performance efficiency of EUVL. The focused features that thoroughly explored are EUV dose, local CD uniformity, PR swelling, pattern collapse, and defects. It is found that, with the chemical composition modification of developer and rinse, EUV pattern fidelity can be effectively optimized resulting in extended process window and improved productivity. It is expected that this work would not only facilitate the extension of EUV application but also help understand how EUV resists behave when they are under the influence of ancillaries.

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Hyungju Ryu, Dokyeong Kwon, Jiho Song, Wongi Park, Jinseong Gwak, Haram Ko, Jiyoung Lee, Jinpyoung Kim, Kyungseok Ryu, Sungjo Hwang, Taemin Jeong, Heeyoung Go, Yigwon Kim, Kyoungyong Cho, Sangjin Kim, and Changmin Park "Chemical approach to make the most of EUVL: stochastic effect mitigation with developer and rinse", Proc. SPIE 12494, Optical and EUV Nanolithography XXXVI, 1249404 (28 April 2023); https://doi.org/10.1117/12.2656415

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