EL2015: development of a submicron photoresist for G-, H-, and I-line exposure tools

Donald W. Johnson; Eitan Shalom; Glenn R. Dickey; Kelly Hale; Terry Pebbles

doi:10.1117/12.20125

1 June 1990 EL2015: development of a submicron photoresist for G-, H-, and I-line exposure tools

Donald W. Johnson, Eitan Shalom, Glenn R. Dickey, Kelly Hale, Terry Pebbles

Proceedings Volume 1262, Advances in Resist Technology and Processing VII; (1990) https://doi.org/10.1117/12.20125
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

The accelerated drive toward 0.5 and 0.3 urn optical imaging is putting severe pressure on both the equipment and photoresist vendors. Materials must give both high resolution and high process latitude. These needs led to the develop- ment of EL2015 positive photoresist series. This is a high contrast, high resolution photoresist series based on the same chemical concepts used in our PR1O24MB resists. This new resist contains a 2,1,5-naphthoquirionediazidesulfonate ester of a special novolac as its photoactive component. This is combined with an improved novolac resin for better film integrity. EL2015 is a versatile positive resist optimized for g-, h-, i-line, and broadband exposure tools. Resolution of better than 0.50 urn has been routinely obtained with current 0.40 NA i-line steppers and 0.40 urn resolution at best focus. A focus latitude of greater than 1.5 urn for 0.5 urn images with an exposure latitude of 30-50% has been demonstrated on i-line equipment. Finally, the thermal stability and plasma etch resistance of EL2015 has been found to be comparable to current high resolution g-line photoresists.

Citation Download Citation

Donald W. Johnson, Eitan Shalom, Glenn R. Dickey, Kelly Hale, and Terry Pebbles "EL2015: development of a submicron photoresist for G-, H-, and I-line exposure tools", Proc. SPIE 1262, Advances in Resist Technology and Processing VII, (1 June 1990); https://doi.org/10.1117/12.20125

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