Presentation + Paper
10 October 2023 Near-infrared imager based on high performance organic photodetector using a-IGZO as electron transport layer
Abu Bakar Siddik, Epimitheas Georgitzikis, Jubin Kang, Pawel E. Malinowski, Joo Hyoung Kim, Yannick Hermans, Vladimir Pejovic, Itai Lieberman, Andriy Kadashchuk, Jan Genoe, Thierry Conard, David Cheyns, Paul Heremans
Author Affiliations +
Abstract
We present a near-infrared (NIR) imager based on high-performance organic photodiode in terms of dark current, specific detectivity and response time. A carefully designed interfacial layer is introduced in the thin-film organic photodiode stack to reduce trap assisted carrier emission leading to sub-nA/cm2 dark current and external quantum efficiency above 50% in the NIR range. The developed imager chip benefits from this improved dark current-voltage characteristic (high light signal to dark noise ratio) and enables high-resolution, monolithic NIR image sensors.
Conference Presentation
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Abu Bakar Siddik, Epimitheas Georgitzikis, Jubin Kang, Pawel E. Malinowski, Joo Hyoung Kim, Yannick Hermans, Vladimir Pejovic, Itai Lieberman, Andriy Kadashchuk, Jan Genoe, Thierry Conard, David Cheyns, and Paul Heremans "Near-infrared imager based on high performance organic photodetector using a-IGZO as electron transport layer", Proc. SPIE 12687, Infrared Sensors, Devices, and Applications XIII, 1268708 (10 October 2023); https://doi.org/10.1117/12.2676479
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KEYWORDS
Imaging systems

Near infrared

Thin films

Readout integrated circuits

Photodiodes

Short wave infrared radiation

Dark current

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