Poster + Paper
10 October 2023 Optimized infrared light response speed <80 ms by applying an interface buffer layer to Schottky components
Author Affiliations +
Conference Poster
Abstract
A Schottky infrared photodetector with dual mechanisms, where both photoelectric and photothermal current generation mechanisms coexist is presented. The dominant role of these mechanisms changes with surface passivation process. In the device without passivation process, the device exhibits high responsivity due to the presence of the photothermal effect but has slow rise and recovery times. However, after surface passivation treatment, the device characteristics are dominated by the photoelectric effect, showing a significantly faster response time, capable of detecting signal level changes within less than 80 ms, with a constant current difference between on and off states. This unique multifunctionality promotes the development of Schottky device capable of achieving multiple optical detection purposes
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Zih-Chun Su, Yu-Ru Liu, Po-Hsien Chiang, Du-Ting Cheng, Deepali Sinha, Jian Hong Lin, and Ching-Fuh Lin "Optimized infrared light response speed <80 ms by applying an interface buffer layer to Schottky components", Proc. SPIE 12687, Infrared Sensors, Devices, and Applications XIII, 126870L (10 October 2023); https://doi.org/10.1117/12.2677850
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KEYWORDS
Passivation

Photodetectors

Interfaces

Infrared radiation

Photothermal effect

Signal to noise ratio

Silicon

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