With the objective of producing high-performance infrared radiation detectors, we have undertaken the study of devices based on the Y-Ba-Cu-O material produced in amorphous film (a-YBCO) by DC sputtering at low temperature (< 150 °C) on p-doped silicon substrates coated with a SiOx oxide film. Two types of structures have been considered: simple planar structures, where a-YBCO is connected to in-plane metal contacts, and trilayer structures where a-YBCO is sandwiched between the two contacts. The near-infrared response was recorded with a laser source at 850 nm wavelength, amplitude modulated up to 40 MHz. The main characteristics of the responses are: i) a 𝑓+2 behavior at very low frequency (resulting from two dipolar relaxations); ii) a typically pyroelectric behavior in 𝑓+1 up to a few tens of kHz; iii) a maximum response followed by a decrease in 𝑓−1/2, reflecting the heat diffusion through the substrate. All of those results could be interpreted with the help of a theoretical model with adjustable parameters. Small size trilayer devices exhibit a very fast response (time constant: 11 ns). Besides, with noise equivalent power levels as low as 8 pW/Hz1/2 and detectivity values of 8×108 cm⋅Hz1/2·W−1 at 1 MHz, our uncooled devices are standing at the state-of-the-art both in terms of sensitivity and bandwidth.
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