Mask corner rounding refers to the unintentional rounding deviation of sharp corners or edges during the mask making process, that is caused by the inherent limitations of the e-beam exposure system, such as beam blur, proximity effects, and the resist exposure process. It can have significant consequences on the lithography of chip manufacturing. This article compares the mask corner rounding behavior under different electron beam sizes and presents a novel Optical Proximity Correction (OPC) approach that incorporates mask corner rounding for various dimensional rectangular shapes, named Rounded Corner Aware OPC (RC-OPC). Contrasting with traditional OPC that rely on a single value for simulating mask corner rounding, this innovative OPC approach delivers substantial advantages including increased accuracy, exceptional lithographic performance, and better pattern fidelity, leading to a more dependable and robust process.
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