A study of applying mask process correction to constant width curvilinear SRAFs

Mary Zuo; Kushlendra Mishra; Rachit Sharma; Ingo Bork; Nassima Zeggaoui

doi:10.1117/12.2687892

21 November 2023 A study of applying mask process correction to constant width curvilinear SRAFs

Mary Zuo, Kushlendra Mishra, Rachit Sharma, Ingo Bork, Nassima Zeggaoui

Proceedings Volume 12751, Photomask Technology 2023; 127511F (2023) https://doi.org/10.1117/12.2687892
Event: SPIE Photomask Technology + EUV Lithography, 2023, Monterey, California, United States

Conference Poster

Abstract

Instead of using the inverse lithography technology (ILT) flow that allows for unrestricted shapes and widths of sub-resolution assist features (SRAFs), Y. Xu et al. propose an alternative approach. This method involves the direct specification of width, curvature, and minimal area to generate constant width curvilinear SRAFs. The study described in Ref. 1 demonstrates several advantages associated with constant width curvilinear SRAFs compared to their freeform counterparts. The advantages include improved compliance with manufacturing rule check (MRC) requirements, mitigation of SRAF printing issues, compatibility with the tile boundary stitching, enhanced runtime robustness, and better control over data volume. In the field of mask process correction (MPC), it is worth examining the potential advantages offered by constant width curvilinear SRAFs. Since all SRAFs must be printed on the mask but not on the wafer during the manufacturing process, the goal of MPC is the same for main features and SRAFs, aiming to ensure that patterns on the fabricated masks align precisely with target shapes and minimize edge placement errors (EPEs). This paper presents a comprehensive study of MPC accuracy and runtime performance when employing constant width SRAFs as input. A comparative analysis is conducted against the use of freeform SRAFs. Various MPC approaches, such as shape-based and dose-based corrections, treating SRAFs as a visible layer without edge bias, curvature-based prebias (CBB), and curvature-based fragmentation (CBF) are explored. The findings of this study provide valuable guidance for the generation of masks with constant width curvilinear SRAFs.

(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Mary Zuo, Kushlendra Mishra, Rachit Sharma, Ingo Bork, and Nassima Zeggaoui "A study of applying mask process correction to constant width curvilinear SRAFs", Proc. SPIE 12751, Photomask Technology 2023, 127511F (21 November 2023); https://doi.org/10.1117/12.2687892

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