Plasma formation during excimer laser irradiation of thin selenium films in air

Alain Jadin; Igor V. Filiouguine; Michel Wautelet; Lucien Diego Laude

doi:10.1117/12.20626

1 August 1990 Plasma formation during excimer laser irradiation of thin selenium films in air

Alain Jadin, Igor V. Filiouguine, Michel Wautelet, Lucien Diego Laude

Proceedings Volume 1279, Laser-Assisted Processing II; (1990) https://doi.org/10.1117/12.20626
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands

Abstract

Thin selenium films are irradiated in air by means of an excimer laser beam (wavelength 248 nm). The fluence threshold for plasma formation is measured as a function of the thickness of the film (20 to 230 nm) and the nature of the substrate (glass, quartz, sapphire). The fluence threshold, F(2), varies in the range 0.5-3.5 J.cm2. At low fluences, films are totally ablated after a certain number of pulses. This number decreases with increasing fluence, independently of the initial thickness of the film. Experimental results are compared with numerical simulation of temperature where the role of the film thickness and the nature of the substrate are introduced.

Citation Download Citation

Alain Jadin, Igor V. Filiouguine, Michel Wautelet, and Lucien Diego Laude "Plasma formation during excimer laser irradiation of thin selenium films in air", Proc. SPIE 1279, Laser-Assisted Processing II, (1 August 1990); https://doi.org/10.1117/12.20626

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