Electric and magnetic field study of spacer layer thickness effects in A1GaAs/InGaAs resonant tunneling diodes

Hyungmo Yoo; Stephen M. Goodnick; John R. Arthur

doi:10.1117/12.20727

1 October 1990 Electric and magnetic field study of spacer layer thickness effects in A1GaAs/InGaAs resonant tunneling diodes

Hyungmo Yoo, Stephen M. Goodnick, John R. Arthur

Author Affiliations +

Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20727
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

Pseudomorphic Al 35Ga 65As/In 1Ga 9As resonant tunneling diodes fabricated with asymmetric spacer layers adjaceht to the tunnel barrier were characterized via magneto-transport measurements. Novel tunneling effects (ground vs excited state tunneling) were observed in the current-voltage characteristics of these devices which depend upon the bias direction. Shubnikov-de Haas oscillations obtained at high magnetic fields show a strong asymmetry with bias direction and give evidence of silicon dopant out diffusion during molecular beam epitaxy.

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Hyungmo Yoo, Stephen M. Goodnick, and John R. Arthur "Electric and magnetic field study of spacer layer thickness effects in A1GaAs/InGaAs resonant tunneling diodes", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); https://doi.org/10.1117/12.20727

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