Ion etching of ultranarrow structures

Axel Scherer; B. P. Van der Gaag

doi:10.1117/12.20784

1 October 1990 Ion etching of ultranarrow structures

Axel Scherer, B. P. Van der Gaag

Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990) https://doi.org/10.1117/12.20784
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

We describe the use of Polymethylmethacrylate as both electron beam sensitive resist and ion etch mask for high-resolution pattern transfer. By using high-resolution electron beam lithography, chemically assisted ion beam etching, and in-situ metallization, we have fabricated ultra-narrow gates with lateral dimensions below 20 nm, spaced with < 50 nm pitch on high mobility 2D electron gas material. This technique, which is thought to provide extremely small lateral electron depletion lengths and well defined confienement potentials, allows us to produce new and more complicated structures for the study of quantum transport.

Citation Download Citation

Axel Scherer and B. P. Van der Gaag "Ion etching of ultranarrow structures", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20784

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