Quantum-well width determination using RHEED oscillations

Emil S. Koteles; Boris S. Elman

doi:10.1117/12.20791

1 October 1990 Quantum-well width determination using RHEED oscillations

Emil S. Koteles, Boris S. Elman

Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990) https://doi.org/10.1117/12.20791
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

GaAs/A1GaAs quantum well (QW) widths were directly determined in-situ during MBE growth using reflection high energy electron diffraction (RHEED) intensity oscillations. Heavy-. and light-hole exciton transition energies in these QWs were measured using photoluminescence excitation (PLE) spectroscopy. We were able to obtain very good fits between calculated curves of these energies, using the standard quantum mechanical model for a QW, and the experimentally determined energies as a function of RHEEDdetermined QW widths. Thus, using this model and its fitting parameters, it is possible to derive QW widths accurately using only the data from PLE spectroscopy.

Citation Download Citation

Emil S. Koteles and Boris S. Elman "Quantum-well width determination using RHEED oscillations", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20791

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