Presentation + Paper
12 March 2024 Narrow linewidth VECSELs for Ba+ cooling at 493 nm
K. Nechay, A. Schramm, M. Mähönen, S. Talmila, J. Hämelahti, P. Sipilä, K. Palomäki, P. Uusimaa
Author Affiliations +
Abstract
Quantum information processing based on trapped ion technology is one of the leading platforms, heavily relying on a set of single-frequency lasers in its core operations. Narrow linewidth lasers perform atom photoionization, cooling, state-preparation and read-out. In this work we demonstrate in-house designed and fabricated optically pumped semiconductor laser gain mirror comprised of InGaAs quantum wells and GaAs/AlAs distributed Bragg reflector. We demonstrate in-house designed and fabricated single-frequency laser operating at 493 nm for Ba+ cooling. Inherent power scaling potential, efficient intracavity frequency conversion, coupled with sub-MHz linewidth and wide gain tuneability make VECSELs advantageous semiconductor laser platform for various quantum technology applications.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
K. Nechay, A. Schramm, M. Mähönen, S. Talmila, J. Hämelahti, P. Sipilä, K. Palomäki, and P. Uusimaa "Narrow linewidth VECSELs for Ba+ cooling at 493 nm", Proc. SPIE 12868, Vertical External Cavity Surface Emitting Lasers (VECSELs) XIII, 1286802 (12 March 2024); https://doi.org/10.1117/12.3001831
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KEYWORDS
Vertical external cavity surface emitting lasers

Chemical species

Laser frequency

Quantum computing

Ions

Laser applications

Mirrors

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