Electrical properties of AlGaN/GaN HEMT under different temperatures

Yihang Liang; Tian Yu; Daquan Yu

doi:10.1117/12.3010802

2 November 2023 Electrical properties of AlGaN/GaN HEMT under different temperatures

Yihang Liang, Tian Yu, Daquan Yu

Proceedings Volume 12919, International Conference on Electronic Materials and Information Engineering (EMIE 2023); 129190O (2023) https://doi.org/10.1117/12.3010802
Event: 3rd International Conference on Electronic Materials and Information Engineering (EMIE 2023), 2023, Guangzhou,, China

Abstract

Heterojunction HEMT (high electron mobility transistor) exhibit exception physical properties, such as high electron saturation velocity, high breakdown field strength and high surface charge density, making them a global research focus. However, with the ambient temperature of AlGaN/GaN HEMT devices increase, it is crucial to investigate the electrical characteristics of the HEMT under varying temperature condition to ensure reliability at room temperature and above. In this paper, the characteristics of commercial HEMT devices are studied from three aspects: firstly, the basic structure and working principle of HEMT. Secondly, two-dimensional electron gas characteristics of AlGaN/GaN HEMT are examined; and lastly, the temperature-dependent DC characteristics of AlGaN/GaN HEMT are analyzed in depth. This study presents the effects of temperature on 2DEG (two-dimensional electron gas) concentration and mobility, providing a deeper understanding of HEMT device performance. This information is useful in the development of more reliable and efficient power converters for electric vehicles, mobile phone chargers, renewable energy systems, and data centers.

(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Yihang Liang, Tian Yu, and Daquan Yu "Electrical properties of AlGaN/GaN HEMT under different temperatures", Proc. SPIE 12919, International Conference on Electronic Materials and Information Engineering (EMIE 2023), 129190O (2 November 2023); https://doi.org/10.1117/12.3010802

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