Presentation
10 April 2024 Characterization of chemical/structural information of latent image via critical-dimension resonant soft x-ray scattering
Author Affiliations +
Abstract
The adoption of EUV lithography has enabled the reduction of device dimensions; however, the commensurate scaling of variability, such as line edge and width roughness (LER/LWR), has remained elusive. Understanding the origins of these effects has proven challenging, as they cannot be detected until after the final dissolution step. In this study, we present our recent findings using critical-dimension resonant soft X-ray scattering (CD-RSoXS) to investigate the scattering behavior of photoresist materials. Our primary objective is to gain insights into the contributions of each process step to the generation of LER/LWR as well as footing/scumming. RSoXS capitalizes on tunable soft X-ray sources to significantly enhance the scattering cross-sections from heterogeneous materials. This enhancement provides valuable insights into sub-nanometer spatial resolution and local chemical sensitivity concurrently. To extract a comprehensive profile of the latent image, we employ simulations involving the form factor and subsequent reconstruction of line shapes.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qi Zhang, Weilun Chao, Warren Holcomb, Ryan Miyakawa, Dinesh Kumar, Ricardo Ruiz, Andrew Neureuther, Patrick Naulleau, and Cheng Wang "Characterization of chemical/structural information of latent image via critical-dimension resonant soft x-ray scattering", Proc. SPIE 12955, Metrology, Inspection, and Process Control XXXVIII, 129550A (10 April 2024); https://doi.org/10.1117/12.3010967
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KEYWORDS
Scattering

X-rays

X-ray characterization

X-ray imaging

Data modeling

Extreme ultraviolet lithography

Laser scattering

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